IGBT transistor IXXK200N65B4. Assembly/installation: PCB through-hole mounting. C(in): 760pF. CE diode: no. Channel type: N. Collector current: 480A. Collector/emitter voltage Vceo: 650V. Conditioning unit: 25. Conditioning: plastic tube. Cost): 220pF. Function: Extreme Light Punch Through, IGBT for 10-30kHz Switching. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: VGES 20V, VGEM 30V. Germanium diode: no. Housing (according to data sheet): TO-264. Housing: TO-264 ( TOP-3L ). Ic(T=100°C): 200A. Ic(pulse): 1200A. Maximum saturation voltage VCE(sat): 1.7V. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 1630W. RoHS: yes. Saturation voltage VCE(sat): 1.5V. Spec info: ICM TC=25°C, 1ms, 1200A. Td(off): 226 ns. Td(on): 45 ns. Technology: XPT™ 900V IGBT, GenX4™. Trr Diode (Min.): -. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:57