IGBT transistor IXGH39N60BD1. Collector current Ic [A]: 76A. Collector peak current Ip [A]: 152A. Collector-emitter voltage Uce [V]: 600V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Configuration: PCB through-hole mounting. Gate breakdown voltage Ugs [V]: 5V. Housing (JEDEC standard): -. Housing: TO-247AD. Manufacturer's marking: 39N60BD1. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 200W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 500 ns. Switch-on time ton [nsec.]: 25 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/02/2025, 20:53