IGBT transistor IRGP4068D-EPBF

IGBT transistor IRGP4068D-EPBF. IGBT transistor. C(in): 3025pF. Cost): 245pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Germanium diode: no. Collector current: 90A. Ic(pulse): 144A. Ic(T=100°C): 48A. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v. Original product from manufacturer International Rectifier. Quantity in stock updated on 02/06/2025, 10:25.