IGBT transistor IRGB14C40LPBF. Assembly/installation: PCB through-hole mounting. C(in): 825pF. CE diode: no. Channel type: N. Collector current: 20A. Collector/emitter voltage Vceo: 400V. Conditioning unit: 50. Conditioning: plastic tube. Cost): 150pF. Gate/emitter voltage VGE(th) min.: 1.3V. Gate/emitter voltage VGE(th)max.: 2.2V. Gate/emitter voltage VGE: 20V. Germanium diode: yes. Housing (according to data sheet): TO-220AB. Housing: TO-220. Ic(T=100°C): 14A. Marking on the case: GB14C40L. Note: integrated resistors R1 G (75 Ohms), R2 GE (20k Ohms). Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. RoHS: yes. Saturation voltage VCE(sat): 1.2V. Spec info: IGBT with on-chip Gate-Emitter and Gate-Collector. Td(off): 8.3 ns. Td(on): 1.35 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13