IGBT transistor IRG4PF50WPBF. Assembly/installation: PCB through-hole mounting. C(in): 3300pF. CE diode: no. Channel type: N. Collector current Ic [A]: 51A. Collector current: 51A. Collector peak current Ip [A]: 204A. Collector-emitter voltage Uce [V]: 900V. Collector/emitter voltage Vceo: 900V. Component family: IGBT transistor. Configuration: PCB through-hole mounting. Cost): 200pF. Gate breakdown voltage Ugs [V]: 6V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (JEDEC standard): TO-247AC. Housing (according to data sheet): TO-247 ( AC ). Housing: TO-247. Ic(T=100°C): 28A. Ic(pulse): 204A. Manufacturer's marking: IRG4PF50W. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 200W. Maximum saturation voltage VCE(sat): 2.7V. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Saturation voltage VCE(sat): 2.25V. Switch-off delay tf[nsec.]: 110 ns. Switch-on time ton [nsec.]: 29 ns. Td(off): 110 ns. Td(on): 29 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13