IGBT transistor IXYK140N90C3. Assembly/installation: PCB through-hole mounting. C(in): 9830pF. CE diode: no. Channel type: N. Collector current: 310A. Collector/emitter voltage Vceo: 900V. Conditioning unit: 25. Conditioning: plastic tube. Cost): 570pF. Function: High-Speed ​​IGBT for 20-50kHz Switching. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Gate/emitter voltage VGE: VGES 20V, VGEM 30V. Germanium diode: no. Housing (according to data sheet): TO-264. Housing: TO-264 ( TOP-3L ). Ic(T=100°C): 140A. Ic(pulse): 840A. Marking on the case: IXYK140N90C3. Maximum saturation voltage VCE(sat): 2.7V. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 1630W. RoHS: yes. Saturation voltage VCE(sat): 2.15V. Spec info: ICM TC=25°C, 1ms, 840A. Td(off): 145 ns. Td(on): 40 ns. Technology: XPT™ 650V IGBT, GenX3™. Trr Diode (Min.): -. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:57