IGBT transistor IXYK140N90C3

IGBT transistor IXYK140N90C3. IGBT transistor. C(in): 9830pF. Cost): 570pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: High-Speed ​​IGBT for 20-50kHz Switching. Germanium diode: no. Collector current: 310A. Ic(pulse): 840A. Ic(T=100°C): 140A. Marking on the case: IXYK140N90C3. Number of terminals: 3. Pd (Power Dissipation, Max): 1630W. RoHS: yes. Spec info: ICM TC=25°C, 1ms, 840A. Assembly/installation: PCB through-hole mounting. Td(off): 145 ns. Td(on): 40 ns. Technology: XPT™ 650V IGBT, GenX3™. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 2.15V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 900V. Gate/emitter voltage VGE: VGES 20V, VGEM 30V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Original product from manufacturer IXYS. Quantity in stock updated on 02/06/2025, 10:25.