IGBT transistor SGH80N60UFDTU. Collector current Ic [A]: 80A. Collector peak current Ip [A]: 220A. Collector-emitter voltage Uce [V]: 600V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Configuration: PCB through-hole mounting. Gate breakdown voltage Ugs [V]: 6.5V. Housing (JEDEC standard): -. Housing: TO-3PN. Manufacturer's marking: SGH80N60UF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 195W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 130 ns. Switch-on time ton [nsec.]: 23 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 20:53