IGBT transistor SGW30N60. Collector current Ic [A]: 41A. Collector peak current Ip [A]: 112A. Collector-emitter voltage Uce [V]: 600V. Component family: IGBT transistor. Configuration: PCB through-hole mounting. Gate breakdown voltage Ugs [V]: 5V. Housing (JEDEC standard): -. Housing: TO-247AC. Manufacturer's marking: G30N60. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 250W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 389 ns. Switch-on time ton [nsec.]: 53 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 20:53