IGBT transistor SGW30N60HS. Assembly/installation: PCB through-hole mounting. C(in): 1500pF. CE diode: no. Channel type: N. Collector current Ic [A]: 41A. Collector current: 41A. Collector peak current Ip [A]: 112A. Collector-emitter voltage Uce [V]: 600V. Collector/emitter voltage Vceo: 600V. Component family: IGBT transistor. Conditioning unit: 25. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 200pF. Function: High Speed ​​Switching. Gate breakdown voltage Ugs [V]: 5V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (JEDEC standard): -. Housing (according to data sheet): TO-247AC. Housing: TO-247. Ic(T=100°C): 30A. Ic(pulse): 112A. Manufacturer's marking: G30N60HS. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 250W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 250W. RoHS: yes. Saturation voltage VCE(sat): 2.9V. Spec info: insulated gate bipolar transistor (IGBT). Switch-off delay tf[nsec.]: 122 ns. Switch-on time ton [nsec.]: 16 ns. Td(off): 106 ns. Td(on): 16 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:14