IRFP4227

IRFP4227. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 260A. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.021 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.