IRFP27N60KPBF

IRFP27N60KPBF. C(in): 4660pF. Cost): 460pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Function: SMPS MOSFET, Low Gate Charge. Id(imp): 110A. ID (T=100°C): 18A. ID (T=25°C): 27A. Idss (max): 250uA. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 27 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 06:25.