Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 5.56$ | 5.56$ |
5 - 9 | 5.28$ | 5.28$ |
10 - 18 | 5.00$ | 5.00$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 5.56$ | 5.56$ |
5 - 9 | 5.28$ | 5.28$ |
10 - 18 | 5.00$ | 5.00$ |
IRFP4229PBF. C(in): 4560pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 180A. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 1mA. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.038 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 44 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Weight: 5.8g. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 09:25.
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