Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.34$ | 3.34$ |
5 - 9 | 3.17$ | 3.17$ |
10 - 12 | 3.01$ | 3.01$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.34$ | 3.34$ |
5 - 9 | 3.17$ | 3.17$ |
10 - 12 | 3.01$ | 3.01$ |
IRFP3710. C(in): 3000pF. Cost): 640pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 180A. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.026 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 09:25.
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