Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.04$ | 1.04$ |
5 - 9 | 0.98$ | 0.98$ |
10 - 24 | 0.93$ | 0.93$ |
25 - 49 | 0.88$ | 0.88$ |
50 - 99 | 0.86$ | 0.86$ |
100 - 154 | 0.84$ | 0.84$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.04$ | 1.04$ |
5 - 9 | 0.98$ | 0.98$ |
10 - 24 | 0.93$ | 0.93$ |
25 - 49 | 0.88$ | 0.88$ |
50 - 99 | 0.86$ | 0.86$ |
100 - 154 | 0.84$ | 0.84$ |
IRFD9014. C(in): 270pF. Cost): 170pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: FET. Function: P-channel MOSFET transistor. Id(imp): 8.8A. ID (T=100°C): 0.8A. ID (T=25°C): 1.1A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 03:25.
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