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IRFD9014

IRFD9014
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.04$ 1.04$
5 - 9 0.98$ 0.98$
10 - 24 0.93$ 0.93$
25 - 49 0.88$ 0.88$
50 - 99 0.86$ 0.86$
100 - 154 0.84$ 0.84$
Quantity U.P
1 - 4 1.04$ 1.04$
5 - 9 0.98$ 0.98$
10 - 24 0.93$ 0.93$
25 - 49 0.88$ 0.88$
50 - 99 0.86$ 0.86$
100 - 154 0.84$ 0.84$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 154
Set of 1

IRFD9014. C(in): 270pF. Cost): 170pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: FET. Function: P-channel MOSFET transistor. Id(imp): 8.8A. ID (T=100°C): 0.8A. ID (T=25°C): 1.1A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 03:25.

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