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Semiconductors Transistors

IRFI630G

IRFI630G
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.87$ 1.87$
5 - 9 1.77$ 1.77$
10 - 24 1.68$ 1.68$
25 - 43 1.59$ 1.59$
Quantity U.P
1 - 4 1.87$ 1.87$
5 - 9 1.77$ 1.77$
10 - 24 1.68$ 1.68$
25 - 43 1.59$ 1.59$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 43
Set of 1

IRFI630G. C(in): 800pF. Cost): 240pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: IRFI630G. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 9.4 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 396
IRFS630A

IRFS630A

C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. T...
IRFS630A
C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. Id(imp): 36A. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.4 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFS630A
C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. Id(imp): 36A. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.4 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.25$ VAT incl.
(1.25$ excl. VAT)
1.25$

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TDA1905

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SSS7N60A

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2SK2750

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MJ11016G

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2SK2545

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MOR1WS-47K

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LM2479NA

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