IRFD9110

Quantity	excl. VAT	VAT incl.
1 - 4	1.06$	1.06$
5 - 9	1.00$	1.00$
10 - 24	0.95$	0.95$
25 - 49	0.90$	0.90$
50 - 81	0.88$	0.88$

Quantity	U.P
1 - 4	1.06$	1.06$
5 - 9	1.00$	1.00$
10 - 24	0.95$	0.95$
25 - 49	0.90$	0.90$
50 - 81	0.88$	0.88$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 81

Set of 1

IRFD9110. C(in): 200pF. Cost): 94pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 5.6A. ID (T=100°C): 0.49A. ID (T=25°C): 0.7A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET POWWER MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 03:25.

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Delivery in 2-3 days, with postal tracking!