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Semiconductors Transistors

IRFD123

IRFD123
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.72$ 1.72$
5 - 9 1.64$ 1.64$
10 - 24 1.55$ 1.55$
25 - 49 1.47$ 1.47$
50 - 56 1.43$ 1.43$
Quantity U.P
1 - 4 1.72$ 1.72$
5 - 9 1.64$ 1.64$
10 - 24 1.55$ 1.55$
25 - 49 1.47$ 1.47$
50 - 56 1.43$ 1.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 56
Set of 1

IRFD123. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 135
IRFD120

IRFD120

C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per cas...
IRFD120
C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFD120
C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.27 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$

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