IRF9Z34NS

Quantity	excl. VAT	VAT incl.
1 - 4	1.52$	1.52$
5 - 9	1.45$	1.45$
10 - 24	1.37$	1.37$
25 - 49	1.30$	1.30$
50 - 99	1.26$	1.26$
100 - 249	1.12$	1.12$
250 - 645	1.07$	1.07$

Quantity	U.P
1 - 4	1.52$	1.52$
5 - 9	1.45$	1.45$
10 - 24	1.37$	1.37$
25 - 49	1.30$	1.30$
50 - 99	1.26$	1.26$
100 - 249	1.12$	1.12$
250 - 645	1.07$	1.07$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 645

Set of 1

IRF9Z34NS. C(in): 620pF. Cost): 280pF. Channel type: P. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 68A. ID (T=100°C): 14A. ID (T=25°C): 19A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 22:25.

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Delivery in 2-3 days, with postal tracking!