IRF9Z24NPBF

IRF9Z24NPBF. C(in): 350pF. Cost): 170pF. Channel type: P. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.5A. ID (T=25°C): 12A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 23:25.