IRF9Z34N

Quantity	excl. VAT	VAT incl.
1 - 4	1.03$	1.03$
5 - 9	0.97$	0.97$
10 - 24	0.92$	0.92$
25 - 49	0.87$	0.87$
50 - 99	0.85$	0.85$
100 - 121	0.75$	0.75$

Quantity	U.P
1 - 4	1.03$	1.03$
5 - 9	0.97$	0.97$
10 - 24	0.92$	0.92$
25 - 49	0.87$	0.87$
50 - 99	0.85$	0.85$
100 - 121	0.75$	0.75$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 121

Set of 1

IRF9Z34N. C(in): 620pF. Cost): 280pF. Channel type: P. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 68A. ID (T=100°C): 14A. ID (T=25°C): 19A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 20:25.

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Delivery in 2-3 days, with postal tracking!