IRFB11N50A

IRFB11N50A. C(in): 1423pF. Cost): 208pF. Channel type: N. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.52 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 14 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 52nC. Spec info: N-Ch MOSFET, VBRDSS 500V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 22:25.