FDS8884

Quantity	excl. VAT	VAT incl.
1 - 4	0.70$	0.70$
5 - 9	0.67$	0.67$
10 - 24	0.63$	0.63$
25 - 49	0.60$	0.60$
50 - 99	0.58$	0.58$
100 - 249	0.57$	0.57$
250 - 2192	0.54$	0.54$

Quantity	U.P
1 - 4	0.70$	0.70$
5 - 9	0.67$	0.67$
10 - 24	0.63$	0.63$
25 - 49	0.60$	0.60$
50 - 99	0.58$	0.58$
100 - 249	0.57$	0.57$
250 - 2192	0.54$	0.54$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 2192

Set of 1

FDS8884. C(in): 475pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 19m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 11/01/2025, 20:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!