N-channel transistor, 30A, 8.5A, 250uA, 19m Ohms, SO, SO-8, 30 v - FDS8884

Quantity	excl. VAT	VAT incl.
1 - 4	0.70$	0.70$
5 - 9	0.67$	0.67$
10 - 24	0.63$	0.63$
25 - 49	0.60$	0.60$
50 - 99	0.58$	0.58$
100 - 249	0.57$	0.57$
250 - 2192	0.54$	0.54$

Quantity	U.P
1 - 4	0.70$	0.70$
5 - 9	0.67$	0.67$
10 - 24	0.63$	0.63$
25 - 49	0.60$	0.60$
50 - 99	0.58$	0.58$
100 - 249	0.57$	0.57$
250 - 2192	0.54$	0.54$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 2192

Set of 1

N-channel transistor, 30A, 8.5A, 250uA, 19m Ohms, SO, SO-8, 30 v - FDS8884. N-channel transistor, 30A, 8.5A, 250uA, 19m Ohms, SO, SO-8, 30 v. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. On-resistance Rds On: 19m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 475pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 40A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 19/04/2025, 22:25.

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