FGB20N60SF

Quantity	excl. VAT	VAT incl.
1 - 1	7.53$	7.53$
2 - 2	7.15$	7.15$
3 - 4	6.78$	6.78$
5 - 9	6.40$	6.40$
10 - 19	6.25$	6.25$
20 - 29	6.10$	6.10$
30 - 39	5.87$	5.87$

Quantity	U.P
1 - 1	7.53$	7.53$
2 - 2	7.15$	7.15$
3 - 4	6.78$	6.78$
5 - 9	6.40$	6.40$
10 - 19	6.25$	6.25$
20 - 29	6.10$	6.10$
30 - 39	5.87$	5.87$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 39

Set of 1

FGB20N60SF. C(in): 940pF. Cost): 110pF. Channel type: N. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 20A. Marking on the case: FGB20N60SF. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 12 ns. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2-PAK. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 2. Function: solar inverter, UPS, welding machine, PFC. Note: N-channel MOS IGBT transistor. CE diode: no. Germanium diode: no. Quantity in stock updated on 11/01/2025, 20:25.

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Delivery in 2-3 days, with postal tracking!