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Semiconductors Transistors

FJAF6810

FJAF6810
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 17.39$ 17.39$
2 - 2 16.52$ 16.52$
3 - 4 15.65$ 15.65$
5 - 9 14.78$ 14.78$
10 - 12 14.44$ 14.44$
Quantity U.P
1 - 1 17.39$ 17.39$
2 - 2 16.52$ 16.52$
3 - 4 15.65$ 15.65$
5 - 9 14.78$ 14.78$
10 - 12 14.44$ 14.44$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 12
Set of 1

FJAF6810. Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed . Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A). Quantity in stock updated on 27/12/2024, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 59
MD2310FX

MD2310FX

Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST...
MD2310FX
Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Collector current: 14A. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
MD2310FX
Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Collector current: 14A. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
3.16$ VAT incl.
(3.16$ excl. VAT)
3.16$
Quantity in stock : 71
FJAF6812

FJAF6812

Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color ...
FJAF6812
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 12A. Ic(pulse): 24A. Marking on the case: J6812. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6812. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes
FJAF6812
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 12A. Ic(pulse): 24A. Marking on the case: J6812. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6812. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes
Set of 1
3.92$ VAT incl.
(3.92$ excl. VAT)
3.92$
Quantity in stock : 44
KSD5703

KSD5703

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltag...
KSD5703
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: 0.1...0.3us. Housing: TO-3PF (SOT399, 2-16E3A)
KSD5703
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: 0.1...0.3us. Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
3.55$ VAT incl.
(3.55$ excl. VAT)
3.55$
Quantity in stock : 779
FJAF6810A

FJAF6810A

Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(p...
FJAF6810A
Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
FJAF6810A
Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$

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Quantity per case: 1. Semiconductor material: silicon. Function: Ultrahigh-Definition CRT Display Ho...
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TT2206

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Cost): 80pF. Semiconductor material: silicon. Collector current: 10A. Pd (Power Dissipation, Max): 6...
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KA3S1265RD

KA3S1265RD

Note: current limitation 8A. Note: oscillator frequency 20kHz. Note: Rds(on) 0.72 Ohms...
KA3S1265RD
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LA7845

LA7845

Note: I2p-p--2.2A. Number of terminals: 7. Pd (Power Dissipation, Max): 11W. Assembly/installation: ...
LA7845
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