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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A) - FJAF6810

NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A) - FJAF6810
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Quantity excl. VAT VAT incl.
1 - 1 17.39$ 17.39$
2 - 2 16.52$ 16.52$
3 - 4 15.65$ 15.65$
5 - 9 14.78$ 14.78$
10 - 12 14.44$ 14.44$
Quantity U.P
1 - 1 17.39$ 17.39$
2 - 2 16.52$ 16.52$
3 - 4 15.65$ 15.65$
5 - 9 14.78$ 14.78$
10 - 12 14.44$ 14.44$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 12
Set of 1

NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A) - FJAF6810. NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Housing: TO-3PF (SOT399, 2-16E3A). Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 20A. Marking on the case: J6810. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V. Number of terminals: 3. Note: screen printed . Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Quantity in stock updated on 15/04/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 59
MD2310FX

MD2310FX

NPN transistor, 14A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 14A. Housing ...
MD2310FX
NPN transistor, 14A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 14A. Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
MD2310FX
NPN transistor, 14A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 14A. Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
3.16$ VAT incl.
(3.16$ excl. VAT)
3.16$
Quantity in stock : 70
FJAF6812

FJAF6812

NPN transistor, 12A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (accord...
FJAF6812
NPN transistor, 12A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Housing: TO-3PF (SOT399, 2-16E3A). Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 24A. Marking on the case: J6812. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6812. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. CE diode: yes
FJAF6812
NPN transistor, 12A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Housing: TO-3PF (SOT399, 2-16E3A). Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 24A. Marking on the case: J6812. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6812. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. CE diode: yes
Set of 1
3.92$ VAT incl.
(3.92$ excl. VAT)
3.92$
Quantity in stock : 44
KSD5703

KSD5703

NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (accord...
KSD5703
NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: 0.1...0.3us
KSD5703
NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: 0.1...0.3us
Set of 1
3.55$ VAT incl.
(3.55$ excl. VAT)
3.55$
Quantity in stock : 774
FJAF6810A

FJAF6810A

NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (accord...
FJAF6810A
NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. BE diode: no. CE diode: no
FJAF6810A
NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. BE diode: no. CE diode: no
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$

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