FDV304P

Quantity (Set of 5)	excl. VAT	VAT incl.
1 - 2	0.51$	0.51$
3 - 4	0.48$	0.48$
5 - 9	0.46$	0.46$
10 - 19	0.43$	0.43$
20 - 49	0.41$	0.41$
50 - 99	0.38$	0.38$
100 - 4221	0.36$	0.36$

Quantity (Set of 5)	U.P
1 - 2	0.51$	0.51$
3 - 4	0.48$	0.48$
5 - 9	0.46$	0.46$
10 - 19	0.43$	0.43$
20 - 49	0.41$	0.41$
50 - 99	0.38$	0.38$
100 - 4221	0.36$	0.36$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 21101

Set of 5

FDV304P. C(in): 63pF. Cost): 34pF. Channel type: P. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 1.5A. ID (T=100°C): 0.87 Ohms @ -0.5A. ID (T=25°C): 0.46A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 304. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 1.22 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.65V. Number of terminals: 3. Quantity per case: 1. Spec info: Operation gate voltage as low as 2.5V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 10/01/2025, 04:25.

Technical documentation