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Semiconductors Transistors

FCP11N60

FCP11N60
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[TITLE]
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[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 4.02$ 4.02$
5 - 9 3.82$ 3.82$
10 - 14 3.62$ 3.62$
Quantity U.P
1 - 4 4.02$ 4.02$
5 - 9 3.82$ 3.82$
10 - 14 3.62$ 3.62$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 14
Set of 1

FCP11N60. C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.32 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 3
STP11NM60

STP11NM60

C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
STP11NM60
C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. G-S Protection: no
STP11NM60
C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. G-S Protection: no
Set of 1
4.58$ VAT incl.
(4.58$ excl. VAT)
4.58$

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FCPF11N60

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SPP20N60C3

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FDP18N50

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IRFPS37N50A

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STF11NM60ND

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C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Ty...
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2SK4013-Q

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KBU8J

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2SK2611

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STP11NM60ND

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