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ESM3030DV

ESM3030DV
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[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 31.51$ 31.51$
2 - 2 29.93$ 29.93$
3 - 4 28.36$ 28.36$
5 - 9 26.78$ 26.78$
10 - 14 26.15$ 26.15$
15 - 19 25.52$ 25.52$
20 - 22 24.36$ 24.36$
Quantity U.P
1 - 1 31.51$ 31.51$
2 - 2 29.93$ 29.93$
3 - 4 28.36$ 28.36$
5 - 9 26.78$ 26.78$
10 - 14 26.15$ 26.15$
15 - 19 25.52$ 25.52$
20 - 22 24.36$ 24.36$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 22
Set of 1

ESM3030DV. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Power Darlington NPN Transistor Module. Max hFE gain: 300. Minimum hFE gain: 300. Collector current: 100A. Ic(pulse): 150A. Note: Screwed. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 225W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.35us. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Type of transistor: NPN & NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1.25V. Collector/emitter voltage Vceo: 400V. Vebo: 7V. Spec info: Single Dual Emitter. Quantity in stock updated on 11/01/2025, 16:25.

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