Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.19$ | 1.19$ |
2 - 2 | 1.13$ | 1.13$ |
3 - 4 | 1.07$ | 1.07$ |
5 - 9 | 1.01$ | 1.01$ |
10 - 24 | 0.95$ | 0.95$ |
25 - 49 | 0.89$ | 0.89$ |
50 - 232 | 0.83$ | 0.83$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.19$ | 1.19$ |
2 - 2 | 1.13$ | 1.13$ |
3 - 4 | 1.07$ | 1.07$ |
5 - 9 | 1.01$ | 1.01$ |
10 - 24 | 0.95$ | 0.95$ |
25 - 49 | 0.89$ | 0.89$ |
50 - 232 | 0.83$ | 0.83$ |
DTC143ZT. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Production date: 2014/49. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 100mA. Marking on the case: 18. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. Quantity in stock updated on 11/01/2025, 16:25.
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