Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BS170_D27Z. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 24pF. Maximum dissipation Ptot [W]: 0.83W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: MX. Drain-source voltage Uds [V]: -45V. Drain Current Id [A] @ 25°C: -0.09A. Drain current through resistor Rds [Ohm] @ Ids [A]: 9 Ohms @ -0.2A. Gate breakdown voltage Ugs [V]: -3.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 25pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 60pF. Channel type: P. Type of transistor: MOSFET. Id(imp): 3A. ID (T=25°C): 0.23A. Idss (max): 500nA. IDss (min): -0.23A. Pd (Power Dissipation, Max): 0.7W. On-resistance Rds On: 14 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 20 ns. Technology: ENHANCEMENT MODE VERTICAL DMOS FET. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 45V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

Channel type: N. Collector current: 30A. Dimensions: 107.5x45x17mm. Pd (Power Dissipation, Max): 700W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 250 ns. Td(on): 50 ns. Housing: Other. Housing (according to data sheet): Other. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.95V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 24. Spec info: 7x IGBT. CE diode: yes. Germanium diode: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=25°C): 0.1A. Idss (max): 0.1A. Note: 5ns...20ns. Pd (Power Dissipation, Max): 0.3W. On-resistance Rds On: 15 Ohms. Technology: D-MOS Log.L. Voltage Vds(max): 50V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSN20. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.173A. Drain current through resistor Rds [Ohm] @ Ids [A]: 15 Ohms @ 0.1A. Gate breakdown voltage Ugs [V]: 3.5V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 25pF. Maximum dissipation Ptot [W]: 0.83W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Housing: SOT23

C(in): 250pF. Cost): 88pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. ID (T=100°C): 4.4A. ID (T=25°C): 6A. Idss (max): 100nA. IDss (min): 10nA. Number of terminals: 4. Pd (Power Dissipation, Max): 8.3W. On-resistance Rds On: 0.8 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 6 ns. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -65...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.8V. Vgs(th) min.: 1V. Technology: Enhancement mode, TrenchMOS transistor. G-S Protection: no

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP125. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 0.12A. Drain current through resistor Rds [Ohm] @ Ids [A]: 45 Ohms @ 0.12A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 130pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP135. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 0.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 60 Ohms @ 0.01A. Gate breakdown voltage Ugs [V]: 2.1V. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 146pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP171P. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.3 Ohms @ -1.9A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 276 ns. Ciss Gate Capacitance [pF]: 460pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP250.115. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ -1A. Gate breakdown voltage Ugs [V]: -2.8V. Switch-on time ton [nsec.]: 80 ns. Switch-off delay tf[nsec.]: 140 ns. Ciss Gate Capacitance [pF]: 250pF. Maximum dissipation Ptot [W]: 1.65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP295. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 1.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.3 Ohms @ 1.8A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 368pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP297. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 0.65A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 160 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP316. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -0.68A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2.2 Ohms @ -0.61A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Quantity per case: 1. Semiconductor material: silicon. Function: 'Smart High-Side Power Switch'. Equivalents: ISP452. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Spec info: miniPROFET. CE diode: yes

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261AA. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AS3. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

BE resistor: 150 Ohms. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: high DC Current, Relay drivers, Lamp drivers. Max hFE gain: 2000. Minimum hFE gain: 1000. Collector current: 1A. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1.25W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BSP50. BE diode: no. CE diode: yes

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP62. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 1.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP89. Drain-source voltage Uds [V]: 240V. Drain Current Id [A] @ 25°C: 0.35A. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.35A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP92P. Drain-source voltage Uds [V]: -250V. Drain Current Id [A] @ 25°C: -0.26A. Drain current through resistor Rds [Ohm] @ Ids [A]: 12 Ohms @ -0.26A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 101 ns. Ciss Gate Capacitance [pF]: 104pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.8A. Marking on the case: U8. Pd (Power Dissipation, Max): 0.35W. Assembly/installation: surface-mounted component (SMD). Tf (type): 60 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Tr: 25 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. Spec info: screen printing/CMS code U8. BE diode: no. CE diode: yes

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U8. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U8. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: hFE 50...300. Collector current: 0.8A. Pd (Power Dissipation, Max): 0.35W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: PNP. Vcbo: 60V. Collector/emitter voltage Vceo: 60V. Spec info: screen printing/CMS code T8. BE diode: no. CE diode: no