Transistors

C(in): 90pF. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 1A. Ic(pulse): 2A. Marking on the case: AR4. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Tf (type): 1000 ns. Housing: SOT-89. Housing (according to data sheet): SOT89. Tr: 250 ns. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: screen printing/SMD code AR4. BE diode: no. CE diode: no

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Collector current: 1A. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. Assembly/installation: PCB through-hole mounting. Tf(max): 1300 ns. Tf(min): 500 ns. Housing: TO-92. Housing (according to data sheet): TO-92 ( SOT-54 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. BE diode: no. CE diode: yes

RoHS: no. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BSS110. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -170mA. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.1A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 45pF. Maximum dissipation Ptot [W]: 0.63W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 23pF. Cost): 6pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Id(imp): 600mA. ID (T=25°C): 150mA. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123LT1G, BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. On-resistance Rds On: 3.5 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: N-channel TrenchMOS transistor Logic level FET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 'SAs'. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 0.19A. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ 0.15A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 3.5 ns. Switch-off delay tf[nsec.]: 11 ns. Ciss Gate Capacitance [pF]: 20.9pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SA. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 0.17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.17A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 40pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 20pF. Cost): 9pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Id(imp): 680mA. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. On-resistance Rds On: 6 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.6V. Vgs(th) min.: 1.6V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SA. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 0.17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 100mA. Gate breakdown voltage Ugs [V]: 2.6V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 20pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SHS. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 0.021A. Drain current through resistor Rds [Ohm] @ Ids [A]: 500 Ohms @ 0.016A. Gate breakdown voltage Ugs [V]: -2.7V. Switch-on time ton [nsec.]: 9.2 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 28pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SRs. Drain-source voltage Uds [V]: 240V. Drain Current Id [A] @ 25°C: 0.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ 0.1A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 77pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 27pF. Cost): 13pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.88A. ID (T=25°C): 0.22A. Idss (max): 100uA. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. On-resistance Rds On: 0.7 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 2.5 ns. Technology: Field Effect Transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 50V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.8V. Spec info: Logic Level Enhancement Mode. Drain-source protection : yes. G-S Protection: no

C(in): 50pF. Cost): 25pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 1A. ID (T=25°C): 0.2A. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. On-resistance Rds On: 1.4 Ohms. RoHS: yes. Weight: 0.008g. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 20 ns. Technology: Field Effect Transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 50V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.5V. Spec info: Logic Level Enhancement Mode. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SS. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 200mA. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.22A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 36ns. Ciss Gate Capacitance [pF]: 27pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J1. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 100mA. Gate breakdown voltage Ugs [V]: 1.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: STs. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 0.03A. Drain current through resistor Rds [Ohm] @ Ids [A]: 30 Ohms @ 15mA. Gate breakdown voltage Ugs [V]: 1.4V. Switch-on time ton [nsec.]: 8.7 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 76pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 0.54A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.43 Ohm @ 0.27A. Gate breakdown voltage Ugs [V]: 1.6V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 31 ns. Ciss Gate Capacitance [pF]: 75pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Housing: SOT23. Power: 360mW. Assembly/installation: SMD. Type of transistor: P-MOSFET. Polarity: unipolar. Drain-source voltage: -60V. Drain current: -330mA. On-state resistance: 2 Ohms

C(in): 25pF. Cost): 15pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Direct interface to C-MOS, TTL, etc. Id(imp): 520mA. ID (T=100°C): 75mA. ID (T=25°C): 130mA. Idss (max): 46.4k Ohms. IDss (min): 10uA. Marking on the case: 11W. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. On-resistance Rds On: 6 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 7 ns. Td(on): 3 ns. Technology: 'Enhancement mode vertical D-MOS transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -65...+150°C. Voltage Vds(max): 50V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.8V. Spec info: screen printing/SMD code 11W. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 13. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.13A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 3 ns. Switch-off delay tf[nsec.]: 7 ns. Ciss Gate Capacitance [pF]: 45pF. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Channel type: N-P. Marking on the case: KNP. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Complementary Pair Enhancement Mode MOSFET. Housing: SOT-363 ( SC-88 ). Housing (according to data sheet): SOT-363. Quantity per case: 2. Number of terminals: 6. Note: screen printing/SMD code KNP. Function: td(on) 7&10ns, td(off) 11&18ns

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VS. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 4.5 Ohms @ -0.1A. Gate breakdown voltage Ugs [V]: -2.1V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 48 ns. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Ciss Gate Capacitance [pF]: 36pF

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: Pd (Power Dissipation, Max). Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.13A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 3.6 ns. Switch-off delay tf[nsec.]: 12 ns. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Ciss Gate Capacitance [pF]: 36pF

C(in): 80pF. Cost): 15pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 1A. ID (T=25°C): 0.25A. Idss (max): 1000uA. IDss (min): 100uA. Marking on the case: SS88. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 5 ns. Technology: 'Enhancement mode'. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 240V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.6V. Drain-source protection : no. G-S Protection: no

C(in): 25pF. Cost): 8.5pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 0.8A. ID (T=25°C): 0.19A. Idss (max): 1uA. IDss (min): 0.01uA. Temperature: +150°C. Pd (Power Dissipation, Max): 0.83W. On-resistance Rds On: 5 Ohms. Td(off): 12 ns. Td(on): 3 ns. Technology: Enhancement mode, TrenchMOS™ technology.. Housing: TO-92. Housing (according to data sheet): SOT54. Voltage Vds(max): 100V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Very fast switching, Logic level compatible. Drain-source protection : yes. G-S Protection: no

C(in): 25pF. Cost): 8.5pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: Very Fast Switching. Id(imp): 0.8A. ID (T=100°C): 0.12A. ID (T=25°C): 0.19A. Idss (max): 10uA. IDss (min): 0.01uA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. On-resistance Rds On: 5 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: 'enhancement mode field-effect transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -65...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V. Spec info: Logic level compatible. G-S Protection: no