Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.57$ | 0.57$ |
5 - 9 | 0.54$ | 0.54$ |
10 - 24 | 0.51$ | 0.51$ |
25 - 49 | 0.49$ | 0.49$ |
50 - 99 | 0.32$ | 0.32$ |
100 - 249 | 0.31$ | 0.31$ |
250 - 760 | 0.29$ | 0.29$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.57$ | 0.57$ |
5 - 9 | 0.54$ | 0.54$ |
10 - 24 | 0.51$ | 0.51$ |
25 - 49 | 0.49$ | 0.49$ |
50 - 99 | 0.32$ | 0.32$ |
100 - 249 | 0.31$ | 0.31$ |
250 - 760 | 0.29$ | 0.29$ |
BFW92A. Housing: TO-50. Resistor B: no. BE diode: high frequency NPN transistor. BE resistor: PCB soldering (SMD). C(in): TO-50. CE diode: surface-mounted component (SMD). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3.2GHz. Function: Wide band RF amplifier up to GHz range.. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 0.025A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-50-3. Type of transistor: NPN. Vcbo: 25V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 25V. Spec info: 'Planar RF Transistor'. Quantity in stock updated on 11/01/2025, 02:25.
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