Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.23$ | 0.23$ |
10 - 24 | 0.22$ | 0.22$ |
25 - 49 | 0.21$ | 0.21$ |
50 - 99 | 0.20$ | 0.20$ |
100 - 249 | 0.19$ | 0.19$ |
250 - 499 | 0.19$ | 0.19$ |
500 - 9137 | 0.18$ | 0.18$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.23$ | 0.23$ |
10 - 24 | 0.22$ | 0.22$ |
25 - 49 | 0.21$ | 0.21$ |
50 - 99 | 0.20$ | 0.20$ |
100 - 249 | 0.19$ | 0.19$ |
250 - 499 | 0.19$ | 0.19$ |
500 - 9137 | 0.18$ | 0.18$ |
BS170. C(in): 24pF. Cost): 40pF. Channel type: N. Drain-source protection : Zener diode. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 1.2A. ID (T=25°C): 0.5A. Idss (max): 10nA. IDss (min): 0.5uA. Marking on the case: BS170. Pd (Power Dissipation, Max): 0.83W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 24/12/2024, 12:25.
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