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1 - 9 | 0.20$ | 0.20$ |
10 - 24 | 0.19$ | 0.19$ |
25 - 49 | 0.18$ | 0.18$ |
50 - 99 | 0.17$ | 0.17$ |
100 - 249 | 0.16$ | 0.16$ |
250 - 499 | 0.15$ | 0.15$ |
500 - 2264 | 0.14$ | 0.14$ |
Quantity | U.P | |
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1 - 9 | 0.20$ | 0.20$ |
10 - 24 | 0.19$ | 0.19$ |
25 - 49 | 0.18$ | 0.18$ |
50 - 99 | 0.17$ | 0.17$ |
100 - 249 | 0.16$ | 0.16$ |
250 - 499 | 0.15$ | 0.15$ |
500 - 2264 | 0.14$ | 0.14$ |
NPN transistor, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V - BFR93A. NPN transistor, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 35mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. Conditioning: roll. Semiconductor material: silicon. FT: 6GHz. Function: UHF-A, RF wideband amplifiers and oscillators.. Max hFE gain: 90. Minimum hFE gain: 40. Marking on the case: R2. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 15V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 3000. Spec info: SMD R2. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 14:25.
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