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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 25mA, 15mA, TO-92, TO-92, 30 v - BF245B

N-channel transistor, 25mA, 15mA, TO-92, TO-92, 30 v - BF245B
Quantity excl. VAT VAT incl.
1 - 4 1.55$ 1.55$
5 - 9 1.47$ 1.47$
10 - 24 1.43$ 1.43$
25 - 38 1.40$ 1.40$
Quantity U.P
1 - 4 1.55$ 1.55$
5 - 9 1.47$ 1.47$
10 - 24 1.43$ 1.43$
25 - 38 1.40$ 1.40$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 38
Set of 1

N-channel transistor, 25mA, 15mA, TO-92, TO-92, 30 v - BF245B. N-channel transistor, 25mA, 15mA, TO-92, TO-92, 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. C(in): 4pF. Cost): 1.6pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Operating temperature: -...+150°C. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 02/06/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 1094
BF545B

BF545B

N-channel transistor, 25mA, 15mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Ids...
BF545B
N-channel transistor, 25mA, 15mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Marking on the case: 21*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 6mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V
BF545B
N-channel transistor, 25mA, 15mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Marking on the case: 21*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 6mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V
Set of 1
0.58$ VAT incl.
(0.58$ excl. VAT)
0.58$
Quantity in stock : 16
2N5458

2N5458

N-channel transistor, 9mA, TO-92, TO-92, 25V. Idss (max): 9mA. Housing: TO-92. Housing (according to...
2N5458
N-channel transistor, 9mA, TO-92, TO-92, 25V. Idss (max): 9mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 4.5pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V
2N5458
N-channel transistor, 9mA, TO-92, TO-92, 25V. Idss (max): 9mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 4.5pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V
Set of 1
2.16$ VAT incl.
(2.16$ excl. VAT)
2.16$

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