Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.01$ | 1.01$ |
2 - 2 | 0.96$ | 0.96$ |
3 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.86$ | 0.86$ |
10 - 24 | 0.81$ | 0.81$ |
25 - 49 | 0.76$ | 0.76$ |
50 - 382 | 0.71$ | 0.71$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.01$ | 1.01$ |
2 - 2 | 0.96$ | 0.96$ |
3 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.86$ | 0.86$ |
10 - 24 | 0.81$ | 0.81$ |
25 - 49 | 0.76$ | 0.76$ |
50 - 382 | 0.71$ | 0.71$ |
BF199. Cost): 3.5pF. Semiconductor material: silicon. FT: 1100 MHz. Function: TV-IF. Collector current: 100mA. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 40V. Collector/emitter voltage Vceo: 25V. Vebo: 4 v. Resistor B: NPN transistor. BE resistor: RF-POWER. C(in): 25V. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 07/04/2025, 11:25.
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