Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.0948$ | 0.0948$ |
10 - 24 | 0.0901$ | 0.0901$ |
25 - 49 | 0.0853$ | 0.0853$ |
50 - 99 | 0.0806$ | 0.0806$ |
100 - 249 | 0.0758$ | 0.0758$ |
250 - 499 | 0.0711$ | 0.0711$ |
500 - 4090 | 0.0663$ | 0.0663$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.0948$ | 0.0948$ |
10 - 24 | 0.0901$ | 0.0901$ |
25 - 49 | 0.0853$ | 0.0853$ |
50 - 99 | 0.0806$ | 0.0806$ |
100 - 249 | 0.0758$ | 0.0758$ |
250 - 499 | 0.0711$ | 0.0711$ |
500 - 4090 | 0.0663$ | 0.0663$ |
BF199. Cost): 3.5pF. Semiconductor material: silicon. FT: 1100 MHz. Function: TV-IF. Collector current: 100mA. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 40V. Collector/emitter voltage Vceo: 25V. Vebo: 4 v. Resistor B: NPN transistor. BE resistor: RF-POWER. C(in): 25V. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 14:25.
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