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Electronic components and equipment, for businesses and individuals

BF245C

BF245C
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Quantity excl. VAT VAT incl.
1 - 4 1.86$ 1.86$
5 - 9 1.76$ 1.76$
10 - 24 1.67$ 1.67$
25 - 49 1.58$ 1.58$
50 - 66 1.54$ 1.54$
Quantity U.P
1 - 4 1.86$ 1.86$
5 - 9 1.76$ 1.76$
10 - 24 1.67$ 1.67$
25 - 49 1.58$ 1.58$
50 - 66 1.54$ 1.54$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 66
Set of 1

BF245C. C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 25mA. IDss (min): 12mA. IGF: 10mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 7.5V. Gate/source voltage (off) min.: 3.2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 24/12/2024, 01:25.

Equivalent products :

Quantity in stock : 1485
BF545C

BF545C

C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C...
BF545C
C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 25mA. IDss (min): 12mA. IGF: 10mA. Marking on the case: 22*. Temperature: +150°C. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 7.8V. Gate/source voltage (off) min.: 3.2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
BF545C
C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 25mA. IDss (min): 12mA. IGF: 10mA. Marking on the case: 22*. Temperature: +150°C. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 7.8V. Gate/source voltage (off) min.: 3.2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$

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CR-05FL7-20K

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