Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.61$ | 1.61$ |
5 - 9 | 1.53$ | 1.53$ |
10 - 24 | 1.45$ | 1.45$ |
25 - 32 | 1.37$ | 1.37$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.61$ | 1.61$ |
5 - 9 | 1.53$ | 1.53$ |
10 - 24 | 1.45$ | 1.45$ |
25 - 32 | 1.37$ | 1.37$ |
AP40T03GP. C(in): 655pF. Cost): 145pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 95A. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. IDss (min): 1uA. Marking on the case: 40T03 GP. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. On-resistance Rds On: 25m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 mS. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V. Operating temperature: -55°C...+150°C. G-S Protection: no. Quantity in stock updated on 08/01/2025, 18:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.