Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.79$ | 0.79$ |
5 - 9 | 0.75$ | 0.75$ |
10 - 24 | 0.71$ | 0.71$ |
25 - 49 | 0.67$ | 0.67$ |
50 - 99 | 0.65$ | 0.65$ |
100 - 249 | 0.60$ | 0.60$ |
250 - 2837 | 0.57$ | 0.57$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.79$ | 0.79$ |
5 - 9 | 0.75$ | 0.75$ |
10 - 24 | 0.71$ | 0.71$ |
25 - 49 | 0.67$ | 0.67$ |
50 - 99 | 0.65$ | 0.65$ |
100 - 249 | 0.60$ | 0.60$ |
250 - 2837 | 0.57$ | 0.57$ |
AO4828. Channel type: N. Trr Diode (Min.): 27.5us. Function: MOSFET transistor. Rds (ON) very low. Id(imp): 20A. ID (T=100°C): 3.6A. ID (T=25°C): 4.5A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 46m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 4.7V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 2. Quantity in stock updated on 08/01/2025, 18:25.
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