Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.34$ | 1.34$ |
5 - 9 | 1.28$ | 1.28$ |
10 - 24 | 1.21$ | 1.21$ |
25 - 49 | 1.14$ | 1.14$ |
50 - 62 | 1.12$ | 1.12$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.34$ | 1.34$ |
5 - 9 | 1.28$ | 1.28$ |
10 - 24 | 1.21$ | 1.21$ |
25 - 49 | 1.14$ | 1.14$ |
50 - 62 | 1.12$ | 1.12$ |
AON6512. C(in): 3430pF. Cost): 1327pF. Channel type: N. Trr Diode (Min.): 22 ns. Type of transistor: MOSFET. Id(imp): 340A. ID (T=100°C): 115A. ID (T=25°C): 150A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 1.9m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 33.8 ns. Td(on): 7.5 ns. Technology: 'Latest Trench Power AlphaMOS technology'. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerSO-8 ( DFN5X6 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Idsm--54A/25°C, Idsm--43A/70°C. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 08/01/2025, 17:25.
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