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Semiconductors
Transistors

Transistors

3182 products available
Products per page :
1...333435 3637...128
Quantity in stock : 21
BC107C

BC107C

Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Colle...
BC107C
Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V
BC107C
Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V
Set of 1
1.05$ VAT incl.
(1.05$ excl. VAT)
1.05$
Quantity in stock : 70
BC109C

BC109C

Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general ...
BC109C
Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 25V. BE diode: no. CE diode: no
BC109C
Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 25V. BE diode: no. CE diode: no
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 193
BC141-16

BC141-16

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 80pF. Cost): 25pF. Quantity per case:...
BC141-16
RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 80pF. Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: for medium power and switching applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO39. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) BC161-16. BE diode: no. CE diode: no
BC141-16
RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 80pF. Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: for medium power and switching applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO39. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) BC161-16. BE diode: no. CE diode: no
Set of 1
0.94$ VAT incl.
(0.94$ excl. VAT)
0.94$
Quantity in stock : 172
BC161-16

BC161-16

Resistor B: no. BE resistor: PCB soldering. C(in): 180pF. Cost): 30pF. Quantity per case: 1. Semicon...
BC161-16
Resistor B: no. BE resistor: PCB soldering. C(in): 180pF. Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: 1A. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): +175°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: EPITAXIAL TRANSISTORS. Tf(max): 650 ns. Tf(min): 500 ns. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) BC141. BE diode: no. CE diode: no
BC161-16
Resistor B: no. BE resistor: PCB soldering. C(in): 180pF. Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: 1A. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): +175°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: EPITAXIAL TRANSISTORS. Tf(max): 650 ns. Tf(min): 500 ns. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) BC141. BE diode: no. CE diode: no
Set of 1
0.86$ VAT incl.
(0.86$ excl. VAT)
0.86$
Quantity in stock : 37
BC177A

BC177A

Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Max h...
BC177A
Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 120. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
BC177A
Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 120. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 70
BC177B

BC177B

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general pu...
BC177B
Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 460. Minimum hFE gain: 180. Collector current: 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: PNP. Operating temperature: -60...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
BC177B
Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 460. Minimum hFE gain: 180. Collector current: 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: PNP. Operating temperature: -60...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
0.79$ VAT incl.
(0.79$ excl. VAT)
0.79$
Quantity in stock : 282
BC182B

BC182B

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE g...
BC182B
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 50V. Vebo: 6V
BC182B
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 50V. Vebo: 6V
Set of 1
0.21$ VAT incl.
(0.21$ excl. VAT)
0.21$
Quantity in stock : 3878
BC182LB

BC182LB

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE g...
BC182LB
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Collector current: 0.1A. Note: ( E,C,B ). Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 60V. Vebo: 6V
BC182LB
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Collector current: 0.1A. Note: ( E,C,B ). Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 60V. Vebo: 6V
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 784
BC183B

BC183B

Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Collector current: 0.2A. Pd (Pow...
BC183B
Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. CE diode: yes
BC183B
Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. CE diode: yes
Set of 10
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$
Quantity in stock : 291
BC184C

BC184C

Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Collector current: 0.2A. Pd (Pow...
BC184C
Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V
BC184C
Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V
Set of 10
1.55$ VAT incl.
(1.55$ excl. VAT)
1.55$
Quantity in stock : 923
BC212B

BC212B

Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington t...
BC212B
Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
BC212B
Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
Set of 10
0.73$ VAT incl.
(0.73$ excl. VAT)
0.73$
Quantity in stock : 10039
BC212BG

BC212BG

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
BC212BG
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC212BG. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 280 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor
BC212BG
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC212BG. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 280 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 602
BC213B

BC213B

Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: general purpose. Colle...
BC213B
Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: general purpose. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. CE diode: yes
BC213B
Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: general purpose. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. CE diode: yes
Set of 5
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 10
BC214C

BC214C

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max h...
BC214C
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 100. Collector current: 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 45V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. CE diode: yes
BC214C
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 100. Collector current: 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 45V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. CE diode: yes
Set of 1
1.70$ VAT incl.
(1.70$ excl. VAT)
1.70$
Quantity in stock : 128
BC237B

BC237B

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Collector current: 0.1A. Pd (Pow...
BC237B
Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Spec info: BC237/25
BC237B
Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Spec info: BC237/25
Set of 10
1.68$ VAT incl.
(1.68$ excl. VAT)
1.68$
Quantity in stock : 1161
BC237BG

BC237BG

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
BC237BG
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC237BG. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor
BC237BG
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC237BG. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 419
BC250

BC250

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 0.1A. Pd (Pow...
BC250
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Collector/emitter voltage Vceo: 20V
BC250
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Collector/emitter voltage Vceo: 20V
Set of 10
1.20$ VAT incl.
(1.20$ excl. VAT)
1.20$
Quantity in stock : 1
BC300

BC300

Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 120V. Collector c...
BC300
Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 120V. Collector current: 0.5A. Power: 0.85W. Max frequency: 120MHz. Housing: TO-39
BC300
Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 120V. Collector current: 0.5A. Power: 0.85W. Max frequency: 120MHz. Housing: TO-39
Set of 1
1.37$ VAT incl.
(1.37$ excl. VAT)
1.37$
Quantity in stock : 27
BC301

BC301

Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 60V. Collector cu...
BC301
Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 60V. Collector current: 0.5A. Power: 0.85W. Max frequency: 120MHz. Housing: TO-39
BC301
Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 60V. Collector current: 0.5A. Power: 0.85W. Max frequency: 120MHz. Housing: TO-39
Set of 1
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 357
BC303

BC303

Resistor B: PNP transistor. BE resistor: -60V. C(in): -0.5A. Cost): 0.85W. Quantity per case: 1. Sem...
BC303
Resistor B: PNP transistor. BE resistor: -60V. C(in): -0.5A. Cost): 0.85W. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Collector current: 0.5A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. BE diode: no. CE diode: no
BC303
Resistor B: PNP transistor. BE resistor: -60V. C(in): -0.5A. Cost): 0.85W. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Collector current: 0.5A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. BE diode: no. CE diode: no
Set of 1
0.68$ VAT incl.
(0.68$ excl. VAT)
0.68$
Quantity in stock : 88
BC304

BC304

Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 240. Minimum hFE ...
BC304
Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Collector current: 0.5A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 45V. Vebo: 7V
BC304
Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Collector current: 0.5A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 45V. Vebo: 7V
Set of 1
1.07$ VAT incl.
(1.07$ excl. VAT)
1.07$
Quantity in stock : 185
BC308A

BC308A

Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Collector current: 0.1A. Pd (Pow...
BC308A
Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Collector/emitter voltage Vceo: 30 v
BC308A
Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Collector/emitter voltage Vceo: 30 v
Set of 10
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$
Quantity in stock : 1032
BC327-16

BC327-16

Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. ...
BC327-16
Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) BC337-16. BE diode: no. CE diode: no
BC327-16
Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) BC337-16. BE diode: no. CE diode: no
Set of 10
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Quantity in stock : 25
BC327-16-112

BC327-16-112

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
BC327-16-112
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: C32716. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 260 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor
BC327-16-112
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: C32716. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 260 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor
Set of 5
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$
Quantity in stock : 540
BC327-25

BC327-25

Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-4...
BC327-25
Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) BC337-25. BE diode: no. CE diode: no
BC327-25
Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) BC337-25. BE diode: no. CE diode: no
Set of 10
0.83$ VAT incl.
(0.83$ excl. VAT)
0.83$
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