Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.98$ | 1.98$ |
5 - 9 | 1.88$ | 1.88$ |
10 - 24 | 1.78$ | 1.78$ |
25 - 44 | 1.68$ | 1.68$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.98$ | 1.98$ |
5 - 9 | 1.88$ | 1.88$ |
10 - 24 | 1.78$ | 1.78$ |
25 - 44 | 1.68$ | 1.68$ |
3DD209L. Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 12A. Ic(pulse): 24A. Marking on the case: D209L. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Tf(min): 0.7us. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 25/12/2024, 16:25.
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