Electronic components and equipment, for businesses and individuals

2SK956

2SK956
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 5.99$ 5.99$
2 - 2 5.69$ 5.69$
3 - 4 5.39$ 5.39$
5 - 9 5.09$ 5.09$
10 - 19 4.97$ 4.97$
20 - 29 4.85$ 4.85$
30+ 4.67$ 4.67$
Quantity U.P
1 - 1 5.99$ 5.99$
2 - 2 5.69$ 5.69$
3 - 4 5.39$ 5.39$
5 - 9 5.09$ 5.09$
10 - 19 4.97$ 4.97$
20 - 29 4.85$ 4.85$
30+ 4.67$ 4.67$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2SK956. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 26A. ID (T=25°C): 9A. Idss (max): 9A. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: F-II Series POWER MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 800V. Quantity in stock updated on 07/01/2025, 21:25.

Equivalent products :

Quantity in stock : 4
FQA10N80C

FQA10N80C

C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
FQA10N80C
C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. On-resistance Rds On: 0.93 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
FQA10N80C
C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. On-resistance Rds On: 0.93 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
Set of 1
5.61$ VAT incl.
(5.61$ excl. VAT)
5.61$

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