Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.07$ | 2.07$ |
5 - 9 | 1.97$ | 1.97$ |
10 - 24 | 1.87$ | 1.87$ |
25 - 49 | 1.76$ | 1.76$ |
50 - 99 | 1.72$ | 1.72$ |
100 - 208 | 1.55$ | 1.55$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.07$ | 2.07$ |
5 - 9 | 1.97$ | 1.97$ |
10 - 24 | 1.87$ | 1.87$ |
25 - 49 | 1.76$ | 1.76$ |
50 - 99 | 1.72$ | 1.72$ |
100 - 208 | 1.55$ | 1.55$ |
3DD13009K. Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Function: Fast-switching. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 12A. Ic(pulse): 24A. Marking on the case: D13009K. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220C. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 25/12/2024, 05:25.
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