Quantity | excl. VAT | VAT incl. |
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1 - 4 | 2.82$ | 2.82$ |
5 - 7 | 2.68$ | 2.68$ |
Quantity | U.P | |
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1 - 4 | 2.82$ | 2.82$ |
5 - 7 | 2.68$ | 2.68$ |
3DD4202BD. Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 20. Minimum hFE gain: 16. Collector current: 1.5A. Ic(pulse): 3A. Marking on the case: 4202BD. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Tf(min): 0.7us. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.18V. Collector/emitter voltage Vceo: 490V. Vebo: 13V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: yes. Quantity in stock updated on 07/01/2025, 22:25.
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