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Semiconductors Transistors

2SK2968

2SK2968
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 13.59$ 13.59$
Quantity U.P
1 - 1 13.59$ 13.59$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1
Set of 1

2SK2968. C(in): 2150pF. Cost): 220pF. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Id(imp): 30A. ID (T=25°C): 10A. Idss (max): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.05 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: FIELD EFFECT MOS Type--(TT-MOS-III). Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 900V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: DC-DC Converter, Relay & Motor Drive. G-S Protection: yes. Quantity in stock updated on 06/01/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 45
STW11NK100Z

STW11NK100Z

C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. ...
STW11NK100Z
C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
STW11NK100Z
C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
Set of 1
5.38$ VAT incl.
(5.38$ excl. VAT)
5.38$

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