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Semiconductors Transistors

2SK3199

2SK3199
Quantity excl. VAT VAT incl.
1 - 1 6.76$ 6.76$
2 - 2 6.43$ 6.43$
3 - 4 6.09$ 6.09$
5 - 9 5.75$ 5.75$
10 - 19 5.61$ 5.61$
20 - 29 5.48$ 5.48$
30+ 5.28$ 5.28$
Quantity U.P
1 - 1 6.76$ 6.76$
2 - 2 6.43$ 6.43$
3 - 4 6.09$ 6.09$
5 - 9 5.75$ 5.75$
10 - 19 5.61$ 5.61$
20 - 29 5.48$ 5.48$
30+ 5.28$ 5.28$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2SK3199. C(in): 650pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 2us. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 20A. ID (T=25°C): 5A. Idss (max): 100uA. IDss (min): 0.1uA. Equivalents: FS5KM-10-AW. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 18 ns. Technology: V-MOS (F). Housing: TO-220FP. Housing (according to data sheet): TO220F-3L. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Quantity in stock updated on 06/01/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 309
FQPF5N60C

FQPF5N60C

C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 300 n...
FQPF5N60C
C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 18A. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 10 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no
FQPF5N60C
C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 18A. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 10 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no
Set of 1
1.44$ VAT incl.
(1.44$ excl. VAT)
1.44$

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