Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.85$ | 0.85$ |
5 - 9 | 0.81$ | 0.81$ |
10 - 24 | 0.76$ | 0.76$ |
25 - 49 | 0.72$ | 0.72$ |
50 - 99 | 0.70$ | 0.70$ |
100 - 165 | 0.69$ | 0.69$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.85$ | 0.85$ |
5 - 9 | 0.81$ | 0.81$ |
10 - 24 | 0.76$ | 0.76$ |
25 - 49 | 0.72$ | 0.72$ |
50 - 99 | 0.70$ | 0.70$ |
100 - 165 | 0.69$ | 0.69$ |
N-channel transistor, 1.6A, 2A, 10uA, 0.32 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( MTP3 ), 60V - 2SK3065. N-channel transistor, 1.6A, 2A, 10uA, 0.32 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( MTP3 ), 60V. ID (T=100°C): 1.6A. ID (T=25°C): 2A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89 ( MTP3 ). Voltage Vds(max): 60V. C(in): 160pF. Cost): 85pF. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: High Speed Switching. Id(imp): 8A. Marking on the case: KE. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 20 ns. Technology: MOS FET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.8V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code KE. G-S Protection: yes. Quantity in stock updated on 19/04/2025, 22:25.
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