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Electronic components and equipment, for businesses and individuals

2SK3561

2SK3561
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Quantity excl. VAT VAT incl.
1 - 4 2.79$ 2.79$
5 - 9 2.65$ 2.65$
10 - 24 2.51$ 2.51$
25 - 41 2.37$ 2.37$
Quantity U.P
1 - 4 2.79$ 2.79$
5 - 9 2.65$ 2.65$
10 - 24 2.51$ 2.51$
25 - 41 2.37$ 2.37$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 41
Set of 1

2SK3561. C(in): 1050pF. Cost): 110pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 32A. ID (T=100°C): 8A. ID (T=25°C): 8A. Idss (max): 100uA. Marking on the case: K3561. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.75 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 26 ns. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 16:25.

Equivalent products :

Quantity in stock : 68
IRFI840G

IRFI840G

Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. On-resistance...
IRFI840G
Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. On-resistance Rds On: 0.85 Ohm 40W. Housing: TO-220-F. Type of transistor: MOSFET. G-S Protection: diode. Id(imp): 18A. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source voltage (Vds): 500V
IRFI840G
Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. On-resistance Rds On: 0.85 Ohm 40W. Housing: TO-220-F. Type of transistor: MOSFET. G-S Protection: diode. Id(imp): 18A. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source voltage (Vds): 500V
Set of 1
2.26$ VAT incl.
(2.26$ excl. VAT)
2.26$
Quantity in stock : 101
IRF840A

IRF840A

C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. ...
IRF840A
C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF840A
C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.07$ VAT incl.
(2.07$ excl. VAT)
2.07$

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Quantity in stock : 173
IRF840

IRF840

C(in): 1300pF. Cost): 310pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. ...
IRF840
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IRF840
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2.11$ VAT incl.
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2.11$
Quantity in stock : 10406
1N4004

1N4004

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
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0.0396$ VAT incl.
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Quantity in stock : 3589
CFR1-4W-18K

CFR1-4W-18K

Resistance: 18k Ohms. Power: 0.25W. Resistor type: carbon layer. Note: CFR1/4W E12. Note: 2.5x6.8mm....
CFR1-4W-18K
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CFR1-4W-18K
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0.0298$ VAT incl.
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0.0298$
Quantity in stock : 55
IRF710

IRF710

C(in): 170pF. Cost): 34pF. Channel type: N. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Fu...
IRF710
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IRF710
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Quantity in stock : 210
CEL470UF25V-B

CEL470UF25V-B

DC voltage: 25V. Capacitance: 470uF. Diameter: 8mm. Lifespan: 2000 hours. Lenght: 14mm. Configuratio...
CEL470UF25V-B
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0.15$ VAT incl.
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Out of stock
2N2222A

2N2222A

RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: P...
2N2222A
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2N2222A
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1.47$ VAT incl.
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1.47$
Quantity in stock : 3294
LM358P

LM358P

Number of circuits: 2. Bandwidth [MHz]: 0.7 MHz. Slew rate [V/us]: 0.3V/us. Input offset voltage max...
LM358P
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LM358P
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0.34$ VAT incl.
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Quantity in stock : 157
BR310

BR310

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
BR310
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(0.70$ excl. VAT)
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Quantity in stock : 18
TK20J50D

TK20J50D

C(in): 2600pF. Cost): 280pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 170...
TK20J50D
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9.84$ VAT incl.
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Quantity in stock : 112
IRF820

IRF820

Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of tra...
IRF820
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1.32$

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