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Semiconductors Transistors

2SK3502-01MR

2SK3502-01MR
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Quantity excl. VAT VAT incl.
1 - 1 12.76$ 12.76$
Quantity U.P
1 - 1 12.76$ 12.76$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1
Set of 1

2SK3502-01MR. C(in): 1200pF. Cost): 140pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 0.75us. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 40A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 25uA. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.58 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 17 ns. Technology: Super FAP-G Series POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Note: Panasonic--B1CERR000022. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 06/01/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 19
STF11NM60ND

STF11NM60ND

C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Ty...
STF11NM60ND
C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.37 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
STF11NM60ND
C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.37 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
Set of 1
4.63$ VAT incl.
(4.63$ excl. VAT)
4.63$
Quantity in stock : 29
STF18NM60N

STF18NM60N

C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. I...
STF18NM60N
C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no
STF18NM60N
C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no
Set of 1
3.82$ VAT incl.
(3.82$ excl. VAT)
3.82$

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M-TL002

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STGF10NB60SD

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TINE1-100GR-0-5

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