Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.00$ | 1.00$ |
5 - 9 | 0.95$ | 0.95$ |
10 - 24 | 0.90$ | 0.90$ |
25 - 31 | 0.85$ | 0.85$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.00$ | 1.00$ |
5 - 9 | 0.95$ | 0.95$ |
10 - 24 | 0.90$ | 0.90$ |
25 - 31 | 0.85$ | 0.85$ |
2SD401. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Collector current: 2A. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Quantity in stock updated on 01/01/2025, 18:25.
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